发明名称 TARGET OF APPARATUS FOR MANUFACTURING SEMICONDUCTOR FOR PERFORMING THIN FILM PROCESS
摘要 PURPOSE: A target of an apparatus for manufacturing a semiconductor for performing a thin film process is provided to prevent particles from being generated in a process, by preventing an arc from being generated in a vent hole to hinder a surface oxide layer from being melted. CONSTITUTION: A target(200) has a plane flange(208) coupled to an upper portion of a chamber in an apparatus for manufacturing a semiconductor for performing a thin film process. The target comprises an O-ring groove(210) and a vent hole(206). The O-ring groove is formed along the circumference of the flange, of which an outside inner wall is perpendicular to the flange. The vent hole has a constant shape, established in the flange so that the vent hole is positioned in a direction from an inside inner wall of the O-ring groove to the center of the target.
申请公布号 KR20010003224(A) 申请公布日期 2001.01.15
申请号 KR19990023431 申请日期 1999.06.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SU HYANG;LEE, DONG JUN;MUN, SEONG TAEK
分类号 H01L21/203;(IPC1-7):H01L21/203 主分类号 H01L21/203
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