发明名称 |
TARGET OF APPARATUS FOR MANUFACTURING SEMICONDUCTOR FOR PERFORMING THIN FILM PROCESS |
摘要 |
PURPOSE: A target of an apparatus for manufacturing a semiconductor for performing a thin film process is provided to prevent particles from being generated in a process, by preventing an arc from being generated in a vent hole to hinder a surface oxide layer from being melted. CONSTITUTION: A target(200) has a plane flange(208) coupled to an upper portion of a chamber in an apparatus for manufacturing a semiconductor for performing a thin film process. The target comprises an O-ring groove(210) and a vent hole(206). The O-ring groove is formed along the circumference of the flange, of which an outside inner wall is perpendicular to the flange. The vent hole has a constant shape, established in the flange so that the vent hole is positioned in a direction from an inside inner wall of the O-ring groove to the center of the target.
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申请公布号 |
KR20010003224(A) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19990023431 |
申请日期 |
1999.06.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SU HYANG;LEE, DONG JUN;MUN, SEONG TAEK |
分类号 |
H01L21/203;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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