| 摘要 |
PROBLEM TO BE SOLVED: To obtain a Schottky barrier diode which hardly deteriorates in reverse characteristics, even if a guard ring layer is formed very shallow. SOLUTION: A P-type guard ring layer 4 is formed in a ring on the surface of an N-type epitaxial layer 2 formed on an N+-type silicon substrate 1, and a metal layer 7 is formed coming into contact with the epitaxial layer 2 and the guard ring 4 for the formation of a Schottky barrier diode. In this case, by making impurities evaporate and diffuse through a polysilicon film 6, the guard ring layer 4 is formed very shallow as 0.2 to 0.5μm, and the P-type polysilicon film 6 is formed between the guard ring layer 4, the insulating film 5 and the metal layer 7. |
