| 摘要 |
PROBLEM TO BE SOLVED: To enable a sensor element of an external force detection sensor to be formed with high dimensional accuracy. SOLUTION: A recess 16 is provided to the rear plane 3b of an element substrate 3 for the formation of an membrane 17. Then, an etching stop layer 18 formed of conducive material is formed on the base 16a of the recess 16. The silicon element substrate 3 and a glass support substrate 2 are jointed together through anodic bonding, through-parts 20 which reach the etching stop layer 18 penetrating through the surface 3a of the element substrate 3 are provided by dry etching for the formation of a sensor 1. Thereafter, the etching stop layer 18 is removed through wet etching by the use of a hydrofluoric acid water solution. The etching stop layer 18 of conductive material prevents notches from being formed on the sidewall of the through-part 20 and overetching from occurring. By this setup, a sensor device 1 can be manufactured keeping dimensional accuracy high as designed and obtain an external force detection sensor of superior stability of output sensitivity. |
