| 摘要 |
PROBLEM TO BE SOLVED: To reduce microscratches on the surface of a wafer, suppress rough surface of the wafer, and reduce metal contamination on the wafer. SOLUTION: In this method, a silicon wafer is polished with a polishing solution for the purpose of adjusting the quality of a surface of the wafer cut out and sliced from a silicon single-crystalline ingot. In this case, the wafer is made by a CZ method, where no aggregate of point defects of an air void type and no aggregation of point defects of an inter-lattice silicon type are present, and the polishing solution is an alkaline colloidal silica polishing solution, having a pH which exceeds 12.0 and not larger than 14.0 or an alkaline aqueous solution which contains a thickening agent or does not contain abrasive grains and having a pH value of not smaller than 8.0 and not larger than 14.0.
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