LIGHT-EMITTING DEVICE, LIGHT-EMITTING ELEMENT, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a light-emitting device by which heat radiation of a light emitting part as heat generating part can be favorably performed and operation voltage can be reduced without requiring a high assembly accuracy. SOLUTION: The semiconductor laser device 100 which is formed by forming a semiconductor layer 15 having a light-emitting part H on a sapphire substrate 1, forming an n-type electrode 14 in an upper part of the semiconductor layer 15 and forming an n-type electrode 15 in a lower part of the semiconductor layer 15 is fixed on a heatsink placed on a stem 33 on which a spacer member 300 which is thinner than the heatsink 200 is provided. In this case, a p-type electrode 13 of the semiconductor laser device 100 is bonded to a first electrode layer 201 formed on the top of the heatsink 200 and a p-type electrode 14 of the semiconductor laser device 100 is connected to a second electrode layer 202 formed on the top of the spacer member through Ag paste 34.