| 摘要 |
PROBLEM TO BE SOLVED: To suppress stresses from growing due to film thickness difference on a transparent substrate for avoiding cracks in light emitting element parts. SOLUTION: Surface of a GaAs substrate is epitaxially grown to form an n-type clad layer 14, an active layer 15 and a p-type clad layer 16. After adhering a p-type transparent substrate 19 to the p-type clad layer 16 surface at the room temp., the GaAs substrate is removed. At the room temp. an n-type transparent substrate 20 is adhered to the clad layer 14 surface via an n-type In0.5Ga0.5P 13. The reafter, transparent substrates 19, 20 and the clad layers 16, 14 are adhered at a high temp. |
