| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an integrated optoelectronic transducing device equipped with a optoelectronic transducing layer of crystalline silicon, which is accurately fabricated through a few number of processes at a low cost and is high in performance and a manufacturing method of the same. SOLUTION: A laminated structure is equipped with a thin-film optoelectronic transducing unit 5 which includes a substrate 1, a first electrode layer, and a crystalline semiconductor layer and a second electrode layer, the laminated structure is separated into cells 2a to 2f by insulating films 13, each being filled into first isolating grooves, the cells 2a to 2f are each separated into an element part and a first electrode lead-out part by a second isolating groove 8, a connection hole is provided to the first electrode lead-out part so as to reach to the first electrode, an inter-element connecting electrode of conductive film formed by screen printing is formed, extending to the second electrode layer of an adjacent cell through the connection hole passing over the insulating film, and the cells 2a to 2f are connected in series with the inter-element connecting electrode of conductive film for integration.</p> |
