| 摘要 |
PURPOSE: A method for forming a capacitor of a ferroelectric memory device is provided to improve the reliability of a semiconductor device by etching the ferroelectric film with a high etching selectivity. CONSTITUTION: The first conductive film for forming a lower electrode(22) of a capacitor and the second conductive film for forming an upper electrode(24) of the capacitor are formed on a semiconductor substrate(20). An upper electrode pattern is formed by selectively etching the second conductive film. The part of the first conductive film which is designed to connected to a metal wire is exposed by selectively etching the ferroelectric film. At this time, a C2F6 gas is used as an etching gas for etching the ferroelectric film. The first and second conductive films are made of platinum film.
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