METHOD FOR FORMING CONTACT OF FLASH EEPROM CELL

摘要

PURPOSE: A method for forming a contact of a flash EEPROM cell is provided to form a contact by an existing mask definition stepper though a cell contact size is small gradually. CONSTITUTION: A cell junction portion(2) and a multitude of cell gate(4) are formed on the semiconductor substrate(1). A cell spacer(5) is formed at a sidewall of the cell gate(4). An undoped silicon layer(6) is formed on the whole structure including the cell spacer(5). A blocking layer is formed on the whole structure including the cell gate(4). An undoped silicon layer pattern(6b) is formed by removing the undoped silicon layer(6) from the upper end of the cell gate(4). The remaining blocking layer is removed. An interlayer dielectric(7) is formed on the whole structure including the undoped silicon layer pattern(6b). A contact hole(100) is formed by etching a part of the interlayer dielectric(7). A conductive doped silicon layer pattern is formed by implanting a cell plug ion.