| 摘要 |
PURPOSE: A stack gate flash EEPROM cell manufacturing method is provided to be capable of skipping ISO mask and etch related processes and also skipping a pad poly and a pad oxide strip after a field oxide is formed. CONSTITUTION: A stack gate flash EEPROM cell manufacturing method includes deposition of a tunnel oxide(12) and poly 1(13), deposition of a poly oxidation or deposition of oxide(14), deposition of nitride(15) and formation of a poly 1 mask(16). After the nitride, the oxide and the poly 1 are sequentially removed, the mask is removed. Then, a field ion implantation process and a field oxidization process are performed. Thereafter, the nitride is removed by wet etch process, and poly doping and etch process are then performed. Next, formation of an ONO film(18), deposition of a poly 2(19), deposition of oxide or oxidization and self-aligned etch process are performed.
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