METHOD FOR MANUFACTURING FLASH EEPROM CELL

摘要

PURPOSE: A flash EEPROM cell manufacturing method is provided to be capable of protecting a control gate from etch damage and thus preventing a blow-up phenomenon of a tungsten silicide, by replacing the components of a control gate with a nitride film. CONSTITUTION: A floating gate(22) and a control gate(23) are formed sequentially on a substrate(21). Then, a nitride film (24) as a control gate is formed on the entire surface and a self-aligned etch mask(25) is then formed. The nitride film (24) as a control gate is formed of 300 - 2000 angstrom by CVD method.