发明名称 DATA STROBE BUFFER OF SYNCHRONOUS DRAM
摘要 PURPOSE: A data strobe buffer of a synchronous DRAM is provided to prevent the mis-operation of a chip by a damping of a data strobe(DS) signal. CONSTITUTION: In case there is a damping in a data strobe signal(DS) in a data strobe buffer, a pulse made by receiving a falling edge of the data strobe signal induces a mis-operation of a chip. Thus, a dynamic buffer making the pulse by receiving the falling edge of the data strobe signal is made to operate at a specific point. A data strobe buffer of a synchronous DRAM(Dynamic Random Access Memory) does not operate in a part where the data strobe signal is damped, by using a signal made by delaying an output of a static buffer receiving the data strobe signal as an enable input of the dynamic buffer. The data strobe buffer comprises the first dynamic buffer generating the first pulse by receiving a rising edge of the data strobe signal, and the second dynamic buffer generating the second pulse by receiving a falling edge of the data strobe signal, and a signal generation unit to generate a signal which becomes active in a high level interval of the data strobe signal.
申请公布号 KR20010004959(A) 申请公布日期 2001.01.15
申请号 KR19990025737 申请日期 1999.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SEUNG HYEON
分类号 G11C11/401;(IPC1-7):G11C11/401 主分类号 G11C11/401
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