| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve characteristics by reducing a junction leakage current and minimizing resistance. CONSTITUTION: A gate oxide(23), a polysilicon layer(24) for gate electrodes, and a mask insulating layer(25) are deposited on a semiconductor substrate(21) having a p-well or an n-well, and then patterned. Thereafter, lightly doped regions(26) and insulating spacers(27) are formed, and then a polysilicon layer(28) is formed on the entire surface of the resultant structure. The polysilicon layer(28) is then selectively etched, and a liquid phase deposition oxide layer(32) is formed on the exposed surface. After that, a doped polysilicon is deposited and then forms isolated buffer polysilicon electrodes(41) by polishing the mask insulating layer(25) and the liquid phase deposition oxide layer(32). Next, the second insulating layer(42) is deposited and patterned to form contact holes. The contact holes are then filled with metallic material(43) such as polysilicon.
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