| 摘要 |
PURPOSE: A method for fabricating a wafer is provided to guarantee a stable yield by minimizing a channeling phenomenon at an ion implanting process and by uniformalizing a distribution of impurities. CONSTITUTION: A method for fabricating a wafer(4) begins with a step of regulating a cut-off angle(theta 1) or a tilt angle formed between an inherent crystal face(a) of an ingot(8), namely an ideal cutting face, and an actual cutting face(4a) of the wafer(4). Next step is to cut the wafer(4) with regulating an azimuthal angle(theta 2) of the cut-off angle(theta 1). In particular, the azimuthal angle(theta 2) may range from zero to twenty degrees or to minus twenty degrees. Accordingly, when the wafer(4) is subjected to a further next step of applying an ion beam to the wafer(4), an undesired channeling phenomenon is minimized.
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