| 摘要 |
PURPOSE: A method for measuring delamination of semiconductor device is provided to be capable of minimizing the delamination problem in a subsequent process, by previously measuring the delamination of the deposited film and an underlying structure using a laser beam. CONSTITUTION: An insulating film(12) is formed on a semiconductor substrate(11). With a metal layer(13) formed on the insulating film, a laser beam is illuminated in order to measure the delamination region(14) in the metal layer. The illuminated laser beam is reflected, which is then sensed by a position sensor. The position sensor senses them by converting these beams into voltages. However, as the position sensor differently senses the reflected beam without refraction and the converted voltages by refracted and reflected beam by means of the delamination region, the delamination can be measured by its voltage.
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