| 摘要 |
PURPOSE: A method for forming an interfacial insulating layer of a semiconductor device is provided to make an evenness by a polishing process, and easily performs a mask process and an etching process, by depositing a layer having a different selection ratio through an insitu method. CONSTITUTION: Two layers having a different selection ratio are deposited by using a prior belt-type BPSG deposition device. Three injectors are used to deposit BPSG layer(13), and one injectors are used to deposit SiO2 layer(14), so that an evenness is made in a post polishing process without additional process. The belt-type BPSG deposition device regulates a gas quantity of three injectors and one injector on a semiconductor substrate having a lower metal wiring(12). After a deposition process. a furnace is used to perform a heat-processing about the BPSG at 750-850 deg.C. Then, unloading is performed at a low temperature of 50 deg.C, a surface on which SiO2 is deposited is quickly cooled, SiO2 layer(14) has a dense structure. The SiO2 layer(14) is deposited with a thickness of 200-1000 angstrom.
|
