| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent abnormal growth of an oxide layer on a sidewall of a multilayered gate and thereby to improve reliability of the device. CONSTITUTION: A gate oxide(203), a polysilicon layer(204), a polycide layer(205) and an insulating layer(206) are successively formed on a semiconductor substrate(201) having an isolation layer(202) formed therein. Next, the insulating layer(206) and the polycide layer(205) are patterned and then an ion implantation process is performed to form a junction region(207) in the substrate(201). Here, a tungsten silicide, a titanium silicide or a cobalt silicide may be used for the polycide layer(205), and a tungsten layer may be used as the alternative to the polycide layer(205). After a spacer(208) is formed on sidewalls of both the insulating layer(206) and the polycide layer(205), the polysilicon layer(204) and the gate oxide(203) are etched. Thereafter, a wet oxidation process is performed at a temperature from 600 to 850 deg.C, so that an oxide layer(209) is formed on the junction region(207) and the polysilicon layer(204) except the polycide layer(205).
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