| 摘要 |
PURPOSE: A metallization method for a semiconductor device, particularly using an alloy of aluminum and copper, is provided to lower the electromigration of metallization layers. CONSTITUTION: After an interlayer dielectric(12) is formed on a silicon substrate(11), a metal line(13), the first oxide layer(14), a silicon nitride layer(15) and the second oxide layer(16) are successively formed on the interlayer dielectric(12). Next, a resist pattern as a mask being selectively covering the second oxide layer(16), a contact hole is formed by dual damascene technique to expose the metal line(13). Then, the first copper layer(18), an aluminum layer(19) and the second copper layer(20) are successively formed to fill the contact hole. In particular, the first and second copper layers(18,20) are formed by physical vapor deposition or chemical vapor deposition. Thereafter, through the following heat treatment process, the copper layers(18,20) are diffused in the aluminum layer(19) and thereby an alloy layer of aluminum and copper is formed. The alloy layer is then planarized on a level with the second oxide layer(16).
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