| 摘要 |
PURPOSE: A method for making an interfacial insulating layer of a semiconductor device is provided to make an element stabilization in a post annealing process by forming a lower interfacial insulating layer as a high-density plasma oxide layer. CONSTITUTION: A gate electrode(2) is formed on a semiconductor substrate(1). A nitride layer(5) of a predetermined thickness is formed on the whole surface. The first interfacial insulating layer(6) for planarizing an upper part of the whole surface is formed as HDP(high-density plasma) oxide layer. A contact plug connected to the semiconductor substrate through the first interfacial insulating layer is formed. A bit line(9) connected to the first contact plug(7) is formed. The second interfacial insulating layer(8) for planarizing the whole surface upper part is formed. The second contact plug(13) is formed to be connected to the first contact plug(7) through the second interfacial insulating layer(8). A storage electrode connected to the second contact plug(13) and an upper part of the storage electrode are formed. Thereby, an interfacial insulating layer used to a lower part of a plate electrode is formed of HDP oxide layer having a hydrogen, and thus a semiconductor device makes an element stabilization in a post annealing process.
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