| 摘要 |
PURPOSE: A low power type SRAM is provided to replace a cell through a repair in case a fail of a device is a column by a bit line in a process and a short of Vss and to remove a standby current as controlling an operation of a precharge transistor using a fuse and cutting off a current path from a power supply electric potential CONSTITUTION: A low power type SRAM in a semiconductor memory device including at least a flip-flop circuit for memory and two switching devices includes a switch for precharging, a switch for equalizing, and a circuit portion(30) for reducing a standby current. The switch for precharging precharges a bit line and a bit line bar to the Vcc when the cell is a standby mode. The switch for equalizing equalizes the bit line and the bit line bar at the standby mode. The circuit portion for reducing a standby current controls operation of the transistor for equalizing and the transistor for precharging by an output signal of a fuse which the address of a cell, in which a defect is generated by the short of the bit line and the Vss, is programmed.
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