METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a thin film transistor is provided to realize a gate electrode sidewall having a positive profile by forming a spacer of a polysilicon layer on a side wall of a thin film transistor gate electrode. CONSTITUTION: A method for manufacturing a thin film transistor comprises the following steps. A conductive layer is formed on an upper portion of an insulating layer(20). The conductive layer is etched excessively and a gate electrode(21) is formed therefrom. A conductive spacer(22a) is formed at both sides of the gate electrode. A gate insulating layer(23) is formed on upper portions of the gate electrode and the insulating layer(20). A channel layer(24a) is formed on the gate insulating layer.