发明名称 COPPER WIRING METHOD WITH ELECTROPLATING
摘要 PURPOSE: A copper wiring method by electroplating has advantage of improving electrical property of semiconductor elements and simplifying its process by means of electroplating to form copper wiring. CONSTITUTION: A copper wiring method accompanying electroplating procedure is accomplished by laminating a first interlayer insulating firm, patterning with a first metal line mask; removing the mask and laminating via contact mask; alternately forming via contact holes having narrower width than for metal line contact holes; removing such via contact mask and laminating seed layer of Ti/Cu/TiN; forming a second metal line mask; etching TiN layer and forming metallic layer within such via contact hole by means of electroplating. Further, such second metal line mask and uncovered seed layer are removed then the resulted product is coated with a second interlayer insulating film.
申请公布号 KR20010003522(A) 申请公布日期 2001.01.15
申请号 KR19990023835 申请日期 1999.06.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, WON GYU
分类号 C25D7/12;(IPC1-7):C25D7/12 主分类号 C25D7/12
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