Chemical copper plating solution for plating contact holes or interconnections in semiconductor device manufacture includes a salt of, e.g., gold, nickel, palladium, cobalt or platinum as a plating accelerator

摘要

A salt of a metal such as gold, nickel, palladium, cobalt or platinum is added as a plating accelerator, in amount of at most 1 mol % with respect to the copper salt, to a chemical copper plating solution containing a copper salt, a chelating agent and a reducing agent. When the amount of copper precipitated reaches 1 wt. % or more with respect to the amount of copper in the plating solution, the plating accelerator is again added in amount 1 mol % or less with respect to the copper salt in the plating solution. The plating solution has a pH of 8-12 and a temperature of 20-60 deg C. An Independent claim is given for a chemical plating process in which the surface of an activated element, such as a contact hole (6) is subjected to chemical copper plating to produce a plating layer (7) using the above chemical plating solution.