发明名称 METHOD FOR DEVELOPMENT PROCESSING
摘要 PROBLEM TO BE SOLVED: To make formable a resist pattern faithful to the pattern during exposure by controlling the temperature of one surface of a resist film to be different from that of the other surface when the resist film on a substrate to be treated is developed after the film is exposed. SOLUTION: When the resist film on a substrate to be treated is developed after the film is exposed, the temperature on the one surface of the resist film is controlled to be different from the temperature on the opposite surface. For example, after a positive resist having sensitivity for i-line is applied and dried on the surface of a silicon wafer 11 as a substrate to be treated to form a resist film 12 having sensitivity for the i-line, the resist film is exposed by using a mercury lamp which emits i-line light as the light source. Then the silicon wafer 11 is mounted on a first temperature controlling plate 14, while a second temperature controlling plate 15 is disposed above and near the resist film 12. The first temperature controlling plate 14 and the second temperature controlling plate 15 are controlled to 25 deg.C and 20 deg.C, respectively so as to give 5 deg.C temperature difference between the upper and lower faces of the resist film 12.
申请公布号 JP2001005192(A) 申请公布日期 2001.01.12
申请号 JP19990174136 申请日期 1999.06.21
申请人 TOSHIBA CORP 发明人 ETO HIDEO
分类号 H01L21/027;G03F7/30;(IPC1-7):G03F7/30 主分类号 H01L21/027
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