| 摘要 |
PROBLEM TO BE SOLVED: To accurately repeat etchings of laminate films in a reaction chamber of an etcher, without dropping operation availability of the etcher. SOLUTION: In this method, a laminate film composed of a polysilicon layer 12, a WSi layer 13 and an antireflection film 14 laminated one above the other is etched in the same reaction chamber to form a gate wiring having a polycide structure with the WSi layer 13 laminated on the upper side of the polysilicon layer 12, the antireflection film 14 is etched, using a reaction gas for removing reaction products deposited on the inner wall of the reaction chamber in etching the WSi layer 13 and the polysilicon layer 12.
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