| 摘要 |
PROBLEM TO BE SOLVED: To enable a silicide of low resistance to be formed without damaging BOX of an NMOS transistor. SOLUTION: Gate electrodes 6, each possessing a sidewall 7, are formed on SOI layers 3 located in a PMOS transistor region 9 and an NMOS transistor region 8 through the intermediary of a gate insulating film 5 respectively. Then, a through-oxide film 12 is formed on the PMOS transistor region 9 and the NMOS transistor region 8, and then source/drain regions 11 are provided to the PMOS transistor and the NMOS transistor. Then, argon ions are implanted into the through-oxide film 12 for the formation of a through-oxide film 13 where damages are introduced. Next, the damaged through-oxide film 13 is removed through wet etching.
|
