VOLTAGE OPERATING TECHNOLOGY FOR COLUMN MEMORY DEVICE DIVIDED INTO SEGMENTS

摘要

PROBLEM TO BE SOLVED: To reduce the number of transistors of a data detecting path, a column spare charging path, and a column segment selecting switch, and rating of voltage/current by supplying high voltage required for high voltage memory operation in a flash EEPROM memory through a high voltage path separated from a data path and a column segment spare charging path. SOLUTION: A flash EEPROM comprises column arrays 220 divided into segments, a sense amplifier 230, and a column segment selecting transistor 240. Low voltage CMOS transistor 250 (1) to 250 (L) are used for an erasing/ program-data transfer and column charging transistor 250. Column segments COLSEG-1-1 to CORSEG-1-L is connected to a high voltage source VPP, and connects global column GCOLUM-1 to GCOLUM-L to a high voltage source VPP through a erasing/program column segment-boost-latch including an internal high voltage thick type oxide transistor.