| 摘要 |
PROBLEM TO BE SOLVED: To secure enough charge carriage capacity between a p-n junction diode and a control transistor, in a semiconductor device which is equipped with a photodetector constituted of a p-n junction diode and a control transistor for controlling the output of light signal charges generated in the inside. SOLUTION: This semiconductor device is provided with a gate oxide film 18 and a gate electrode 20 on the surface of a p-type substrate 14. It is further provided with a recess 42 in the region, adjoining the gate electrode 20 of the p-type substrate 14. This is provided with an n-type drain region 30 on a side opposite to the recess 42 across the gate electrode 20, of a p-type substrate. An n-type region 44, which includes a region directly below the recess 42 and sinks directly into below the gate oxide film 18, is made by implanting n-type impurities, at a prescribed implantation angle, into the p-type substrate 14. A p-type region 46, which covers the region directly under the recess 42 and moreover constitutes a p-n junction diode together with the n-type region 44, is formed by implanting p-type impurities into the p-type substrate 14, thus constituting a p-n junction diode is constituted.
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