COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a compound semiconductor light emitting element in which color tone can be controlled delicately by sandwiching a first light emitting layer between a p-type compound semiconductor epitaxial layer and an n-type compound semiconductor epitaxial layer and sandwiching a second light emitting layer emitting light of longer wavelength than the first light emitting layer between two compound semiconductor layers containing impurities. SOLUTION: First and second light emitting layers 1, 2 are formed on a third light emitting layer 30, i.e., a ZnSe single crystal substrate. The first light emitting layer 1 is sandwiched between a p-type compound semiconductor epitaxial layer 11 and an n-type compound semiconductor epitaxial layer 12 through a heteroepitaxial interface. The second light emitting layer 2 emitting light of longer wavelength than the first light emitting layer 1 is sandwiched between two compound semiconductor layers containing impurities of the same type as any one of the p-type compound semiconductor epitaxial layer 11 or the n-type compound semiconductor epitaxial layer 12.