| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation in air while a BeTe layer wherein P-type doping property is high and lattice mismatching to a GaAs substrate is low is used as a contact layer, regarding a p-type contact electrode device in ZnSe based II-VI compound semiconductors. SOLUTION: The p-type contact electrode device in the ZnSe based II-VI compound semiconductors is provided. This device 2 is provided with a contact layer 5 composed of p-BeTe, a cap layer 4 on the contact layer 5 which layer 4 is composed of p-ZnSe, and an electrode 3 on the cap layer 4. It is preferable that the thickness of the cap layer 4 is 30-70 Å, or the electrode 3 is composed of gold, or gold is diffused in the cap layer 4. |
