| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance a breakdown voltage between a source and a drain by lengthening the effective channel length in a MOS-FET formed on a silicon substrate in a MOS-FET driven field emission device, and to finely process it. SOLUTION: First and second gate electrodes 202, 203 are formed opposite to an insular block 200 formed by coupling plural emitters, and a channel control electrode 205 is provided so as to divide a channel formed right below the block 200 and gate electrodes 202, 203. If a voltage is applied to the emitter gate layer of the block 200 acting as a drain electrode, an inversion layer spreads out right below it as a channel in which an electron or an electron hole can move is formed between it and a source electrode 204. However, the source electrode part is prevented from being influenced by this inversion layer by the channel control electrode 205, an effective channel length is lengthened regardless of its fine structure, a withstand voltage is enhanced, gate-off leakage is reduced and a malfunction is not caused.</p> |
