| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent abnormal growth of an n-type InP current block layer by controlling the surface migration length longer than a specified length when the n-type InP current block layer is formed. SOLUTION: In an n-type InP substrate 1 where a double heterostructure part 2 is grown selectively, an SiO2 stripe mask for blocking growth is formed in self-aligned manner only on top of the double heterostructure part 2 and an InP current block layer 4 comprising a p-type InP current block layer 41 and an n-type InP current block layer 42 is grown sequentially, while being buried selectively, in the channel region 3 on the opposite sides of the double heterostructure part 2. When the n-type InP current block layer 42 is grown, surface migration of group III material species is accelerated in order to suppress abnormal growth in the vicinity of a DH structure. More specifically, surface migration length is controlled to 1500 nm or longer. |
