| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that when all interlayer insulating films are formed of films of the same kind and a contact hole is formed in an interlayer insulating film that is formed on an interconnection whose cover margin is reduced, the contact hole goes through the interlayer insulating film on the side surface of the interconnection to reach a lower-layer interconnection and a plug formed in the contact hole causes the interconnections to short circuit if mask misalignment occurs. SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a second insulating film 3 for covering a conductor 2, on a first insulating film 1 having the conductor 2 exposed thereto; and forming a recess 6 in the film 3 by etching so as to reach the conductor 2. The lower layer of the film 3 is formed of a material which exhibits a higher etching rate at least with respect to the upper layer of the film 1. |
