| 摘要 |
PROBLEM TO BE SOLVED: To prevent the accumulation of electric charges of a gate connection wiring by providing a diffusion region against the accumulation of electric charges of the opposite conduction type from that of a well region which is connected to the gate connection wiring for preventing the accumulation of electric charges at the well region of a gate array. SOLUTION: A P diffusion region 5P of a basic cell function, along with a first gate 1a provided at an N well region 6N, and an N diffusion region 5N of a basic cell function along with a second gate 1b provided at a P well region 6P are provided. Then, the first and second gates 1a and 1b are mutually connected by gate connection wiring 2G. A P-N diffusion region against the accumulation of electric charge that is provided at the N and P well regions 6N and 6P and are connected to an aluminum gate connection wiring 2G for preventing accumulation of electric charges are connected to the gate connection wiring 2G, thus surely and accurately preventing the accumulation of electric charges at the gate connection wiring 2G.
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