| 摘要 |
PROBLEM TO BE SOLVED: To realize high density of a semiconductor integrated circuit device by reducing the area of each macro cell by arranging a macrocell without a substrate contact, arranging a metallic wiring for connecting macrocells and separately installing a substrate contact cell on a metallic wiring from a macrocell. SOLUTION: When a layout design by an automatic wiring tool is started, a macrocell 43 without a substrate contact inside the macrocell 43 is arranged by a macrocell automatic arrangement step based on layout design of a semiconductor integrated circuit device. Then, a wiring, connecting the macrocells 43 mutually is arranged by a macrocell automatic wiring step and a substrate contact 50, is arranged by a substrate contact post-installation program consisting of a substrate contact post-installation step of a P-well part and a substrate contact post-installation step of an N-well part. Thereby, the area of each macrocell 43 can be reduced by the portion of an area occupied by the substrate contact cell 50.
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