| 摘要 |
PROBLEM TO BE SOLVED: To reduce the time for dry cleaning of a CVD system. SOLUTION: A system includes a treatment chamber 2 for repeatedly carrying out film formation on a wafer 4, an etching gas feed unit 14 for feeding an etching gas to the treatment chamber 2 for etching a deposited film, and a trap 22 for gathering material in an evacuation gas via a main evacuation path 18 for evacuating the chamber 2. In addition, the system includes a detour path 26 for making a detour around the trap 22, and switch valves 27, 28, and 29 for opening the detour path 26 and closing the main evacuation path 18, when the etching gas is fed. When dry cleaning is carried out, the etching gas is made to detour around the trap 22 and is evacuated, to prevent the contact of the etching gas with the material collected in the trap 22. In this way, since the gathered material does not need to be removed before the dry cleaning, so that overall treatment time for the dry cleaning is reduced.
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