| 摘要 |
PROBLEM TO BE SOLVED: To provide a proximity effect correction method which can be used commonly for a lithography apparatus and a transfer device, able to use a negative resist, and prevent thermal deformation of a mask. SOLUTION: A method for correcting proximity effects is used for correcting proximity effects, which occurs at the formation of a pattern on a wafer 3 by electron beam exposure. In the method, a mask 1 which is divided into a plurality of sections having dimensions smaller than the spread dimension of back-scattered electrons at the making of an exposure pattern forming exposure and different reflectivity is prepared. The mask 1 is irradiated with a correction light, and reflected light from the mask 1 is projected upon the wafer 3. Since the reflection mask 1 is used as a mask for proximity effect correction, high-accuracy correction exposure can be performed reading, because the occurrence of the thermal deformations of the mask and the formation of a doughnut shape pattern in a stencil mask is prevented, as compared with the case where a transmissive mask is used.
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