发明名称 SEMICONDUCTOR DEVICE, ITS MANUFACTURE, AND COMMUNICATION METHOD
摘要 PROBLEM TO BE SOLVED: To put up a higher barrier at a low cost to the unauthorized use of a user terminal. SOLUTION: A channel region 2, a source region 3, and a drain region 4 are formed on a polycrystalline semiconductor layer 1. A polycrystalline TFT 101 varies in characteristics depending on the volume of crystal grain boundaries 6 contained in the channel region 2. A drain current becomes smaller with an increase of grain boundaries 6 in the channel region 2. The TFT 101 is mounted together with a coding circuit on a semiconductor chip or a system so as to use codes obtained by coding the electrical properties of the TFT 101 for discriminating a semiconductor chip or a system.
申请公布号 JP2001007290(A) 申请公布日期 2001.01.12
申请号 JP19990178173 申请日期 1999.06.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAEDA SHIGENOBU;IPPOSHI TAKASHI;KURIYAMA SACHITADA;HONDA HIROMI
分类号 H01L21/822;H01L21/20;H01L21/336;H01L21/8246;H01L23/58;H01L27/04;H01L27/112;H01L29/786;H04L9/32;H04M1/665;H04M1/67;H04W12/12 主分类号 H01L21/822
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