| 摘要 |
PROBLEM TO BE SOLVED: To provide a conductive barrier layer which is used in an integrated circuit and stable at a high temperature. SOLUTION: A conductive barrier stable at a high temperature in an integrated circuit is composed of a substrate 12, a first barrier layer 14 which is located on the substrate 12 and contains metal selected out of a group composed of Ta, Ti, Nb, Zr, Al and Hf, and a first composite film 16 which is located on the first barrier layer 14 and contains iridium and oxygen, where the first composite film 16 is kept conductive even after it is subjected to a high-temperature annealing process in an oxygen atmosphere. |
