MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To easily and surely achieve a current constriction structure of a semiconductor light emitting device composed of III-V nitride semiconductor. SOLUTION: An N-type clad layer 14, an N-type optical guide layer 15, a multiple quantum well active layer 16 and a P-type optical guide layer 17 are grown in order on a substrate 11 composed of sapphire. After that, a current constriction forming layer 18A composed of SiO2 whose film thickness is abount 0.1 μm is deposited on the whole surface of a P-type optical guide layer 17. A mask pattern 19B having a stripe-shaped aperture part wherein the aperture width is about 3 μm and the stretching direction of stripe becomes almost the <1-100> direction of GaN crystal is formed on the current constriction forming layer 18A. Wet etching is performed by using the mask pattern 19B, and a current constriction layer 18B having an aperture part 18a is formed from the current constriction forming layer 18A. A P-type clad layer 20 is grown on the P-type optical guide layer 17 so as to be largely spread also on the current constriction layer 18B.