| 摘要 |
PROBLEM TO BE SOLVED: To obtain a III nitride semiconductor thin film which is free from cracking even when the thickness of the film is >=1 μm, and in which there is hardly caused degradation in the characteristics of a semiconductor device due to its small interlayer transition. SOLUTION: In a mask 21 composed of a silicon oxide thin film formed on a semiconductor substrate 10 or AlxGayIn1-x-yN (where, 0<=x, 0<=y, and x+y<=1) formed on the substrate 10 and a III nitride semiconductor thin film, the mask 21 is constituted in a periodic structure (period: P) and the width W (name 'mask width') of the covering section of the mask 21 in the periodic direction is adjusted to <50 μm. In addition, the ratio (W/P) of the mask width W to the period P is adjusted to 0.10-0.75. |
