| 摘要 |
PROBLEM TO BE SOLVED: To realize a manufacturing method of a charge transfer element, which can easily manufacture the charge transfer element, which is superior in stable transfer characteristics, even in a miniaturized repeated pitch structure for miniaturization. SOLUTION: First-phase transfer parts of N--regions are formed into an N-type semiconductor layer 6 directly under first charge transfer electrodes 1 by an ion-implantation of P-type impurities 10a, which is performed using the electrodes 1 and photoresists 5, which are formed from the intermediate position between the electrodes 1 extending over the position in the middle of the layer 6 adjacent to the electrodes 1 as masks and first, N-type impurities 11 are ion-implanted in the layer 6 using the electrodes 1 as masks. After the photoresists 5 are removed, P-type impurities 10b are ion-implanted in the layer 6, a second-phase storage part of the same potential level as that in the layer 6 is formed in the layer 6 and the N--regions and B-type regions are formed in the layer 6 in a self-aligned manner to the electrodes 1. Easy manufacture of a charge transfer element, for transferring a signal charge in superior transfer characteristics, becomes possible even in a miniaturization repeated pitch structure using miniaturization.
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