DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a diamond semiconductor device with a P-N junction which is capable of rectifying a current even at a high temperature. SOLUTION: An N-type diamond semiconductor crystal layer 4, doped with sulfur which serves as donor atoms, is formed through a CVD method on a P-type diamond semiconductor crystal 2 which is formed of high-pressure synthetic diamond doped with boron or natural IIb diamond to form a P-N junction 6. This P-N junction 6 is capable of carrying out an satisfactory rectifying action at a high temperature of 500 deg.C.