| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor chemical sensor in which the stability of a characteristic is high and whose durability is high. SOLUTION: A drain region 2 and a source region 3 are formed so as to be separated on the side of the main surface of a p-type silt-con substrate 1. An insulating film 9 which comprises an opening part 9a in a part corresponding to a channel part 4 between the drain region 2 and the source region 3 and which is composed of a silicon oxide film is formed on the main surface of the p-type silicon substrate 1. An ion-sensitive film 6 which is composed of an organic film via a gate insulating film 5 composed of a silicon oxide film is formed on the channel part 4. An exfoliation preventive film 10 which comprises an eaves part 10a projected up to the opening face of the opening part 9s and which is composed of an inorganic film is formed on the insulating film 9. That is to say, a part of the ion-sensitive film 6 which is buried into the opening part 9a is sandwiched between the eaves part 10a of the exfoliation preventive film 10 and the gate insulating film 5.
|
