| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance of a field-effect transistor and to reduce the high-frequency loss in the transistor. SOLUTION: An active layer 33 is formed on a semi-insulating semiconductor substrate 31, a high-concentration impurity layer 34 is formed on the layer 33, a semiconductor layer 35 which can make a non-alloy ohmic contact with a metal layer is formed on the layer 34 and source and drain electrodes 38 and 40, which make a non-alloy ohmic contact with the layer 35, are formed on the layer 35. Moreover, a gate electrode 39 is formed on the layer 33 in a self-aligned process which is performed using the electrodes 38 and 40 as masks.
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