| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a gate electrode, a resistor film and the like exhibiting no variations in resistance. SOLUTION: A first RTA process is performed after phosphorus ions are implanted into part of a polysilicon film. After boron ions are implanted into another part of the polysilicon film, the resulting polysilicon film is patterned to form a gate electrode 8 and a resistor film 13. After a TEOS film is deposited, the TEOS film is patterned to form a silicidizing mask 10a having an opening for a silicidizing region Rsi. Then, annealing is performed to activate boron in an oxygen-containing atmosphere, thereby forming an oxide film 31 on the gate electrode 8 in the region Rsi and a highly doped source/drain region 6. The film 31 suppresses the outward diffusion of impurities, and hence suppresses impurity ions breaking through the electrode 8 when ion implantation for promoting silicidization is subsequently performed.
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