| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP-polishing agent, which polishes the surface of a silicon oxide insulating film, etc., at a high speed without flaws for making high planarity by comprising a low-molecular additive selected from among cerium oxide particle, a dispersant, and anionic water-soluble organic low- molecule comprising specified free radical as well as water. SOLUTION: This CMP-polishing agent includes a low-molecular additive selected from among cerium oxide, a dispersant, and water-soluble organic low-molecule comprising free-COOM radical, phenol-OH radical, -SO3M radical, -O.SO3H radical, -PO4M2 radical, or PO3M2 radical (where M is H, NH4, or metal atom, such as Na, K) as well as water. The ratio between the speed of polishing silicon oxide film and that for silicon nitride film is desirably at least 10. With a substrate, where a film to be polished is formed pressurized to a polishing cloth of a polishing surface plate, the film is polished by moving the substrate and polishing surface plate, while supplying the CMP-polishing agent between the polishing film and the polishing cloth.
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