| 摘要 |
PROBLEM TO BE SOLVED: To form a optoelectronic transducer film combining the advantages of amorphous material and crystalline material by including a nano-silicon layer where silicon nano-crystals, i.e., silicon grains having diameter of several nano-meters, are integrated. SOLUTION: A wide band gap silicon carbide doped with n-type impurities (a-SiCz:O) or silicon oxynitride (SiOxNy) or SiO2 is deposired, as a hole blocking layer, on a heavily doped n-type C-Si substrate. An undoped nano-silicon layer is deposited thereon as a light absorbing/signal charge multiplication layer, and a wide gap a-SiCz:O doped with p-type impurities are deposited further thereon as an electron block layer followed by deposition of an ITO(indium/tin oxide) as a transparent electrode. Consequently, the optoelectronic transducer film has thermal stability, carrier dynamic characteristics, and possibility of avalanche multiplication equivalent to those of a crystal material and the absorption wavelength can be adjusted in both film thickness direction and in-plane direction of the substrate.
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