发明名称 ACTIVE MATRIX SUBSTRATE AND ITS MANUFACTURE AS WELL AS ELEMENT FORMATION SUBSTRATE AND INTERMEDIATE TRANSFER SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To manufacture an active matric substrate at low costs and with high accuracy by a method wherein an element is formed on an element formation substrate, an interconnection is formed on a transfer destination substrate, the element is transferred to the transfer destination substrate and the interconnection is connected. SOLUTION: An etching stop layer 402 an undercoat layer 305 and TFTs 102 are formed on an element formation substrate 401, Protective films 601 are formed on the respective TFTs 102. A transfer destination substrate 301 is coated with a conductive paste by screen printing, a pattern is formed so as to be annealed, and scanning lines 105 are formed. In addition an interlayer insulating film 302 and a flattened film 303 are coated with a photoresist so as to be exposed and developed, a mask is manufactured so as to be etched, and contact parts 201 are formed on signal lines 104 and the scanning lines 105. Then, TFTs on an intermediate transfer substrate 701 are transferred to the transfer destination substrate 301. Then, connecting electrodes or the like which are used to connect the signal lines 104 to the FETs 102 are formed. At the same time, also a pixel electrode is formed.</p>
申请公布号 JP2001007340(A) 申请公布日期 2001.01.12
申请号 JP19990179214 申请日期 1999.06.25
申请人 TOSHIBA CORP 发明人 AKIYAMA MASAHIKO
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L21/02;H01L21/336;H01L21/60;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/786;G02F1/134 主分类号 G02F1/1343
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