发明名称 SEMICONDUCTOR WAFER RAPID DECHUCK FROM ELECTROSTAITC CHUCK UTILIZING HYSTERETIC DISCHARGE CYCLE
摘要 <p>PROBLEM TO BE SOLVED: To rapidly dechuck a wafer from a chuck by applying a voltage to between the wafer and an electrode. SOLUTION: A hysteretic discharge cycle is carried out, and remaining electric charges are eliminated, a voltage is a damping oscillation waveform, and a damping electric field is supplied to a wafer 114 to chuck a surface interface 120. A shape of an electric field in this interface is extremely imperative for attaining a rapid dechuck at 200 ms or less.</p>
申请公布号 JP2001007191(A) 申请公布日期 2001.01.12
申请号 JP20000118199 申请日期 2000.04.19
申请人 APPLIED MATERIALS INC 发明人 LEESER KARL F
分类号 B23Q3/15;H01L21/683;(IPC1-7):H01L21/68 主分类号 B23Q3/15
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